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Pijush Bhattacharya

About

As a graduate student Dr. Bhattacharya was studied laser material interaction and electrical, optical and structural properties of thin film and bulk semiconductor. During this period he was also engaged bulk crystal growth and thin film fabrication techniques for semiconductor materials. After doctoral study, Dr. Bhattacharya joined Texas Instrument R&D center, Japan to work on high dielectric constant materials for Si devices. He also worked on fabrication of Semiconductor Laser at Center for advance technology, India.

At Fisk Dr. Bhattacharya engage mainly research on crystal growth and characterization of Radiation detector semiconductor and Scintillators.

Research

Current Research Interests

Fields: Developmental Radiation detector

Areas: Bulk crystal growth, materials characterization and detector fabrication;

Current Research Interests

Fields: Developmental Radiation detector

Areas: Bulk crystal growth, materials characterization and detector fabrication;

Recent Publications

 

  1. "Crystal growth in LiGaSe2 for semiconductor radiation detection applications," J. Crystal Growth, 379, 111 (2013), A.C. Stowe, J. Woodward, E. Tupitsyn, E. Rowe, B. Wiggns, L Matei, P. Bhattacharya and A. Burger.
  2. “A new lanthanide activator for Iodide based scintillators: Yb2+” IEEE Transactions on Nuclear Science, 60, No. 2, (2013) E. Rowe, P. Bhattacharya, E. Tupitsyn, M. Groza, A. Burger, N. J. Cherepy, S. A. Payne, B. Sturm, and C. Pédrini,
  3. “Double salts iodide scintillators: Cesium Barium Iodide, Cesium Calcium Iodide, and Barium Bromine Iodide”, Crystal. Res. Technol., 48, No. 4, 227–235 (2013),  E. Rowe, E. Tupitsyn, B. Wiggins, P. Bhattacharya, L. Matei, M. Groza, V. Buliga, A. Burger, P. Beck, N.J. Cherepy and S.A. Payne,
  4. "Nonlinear quenching of densely excited states in wide-gap solids", Phys. Rev. B, 87, 125117 (2013), V. Pankratov, A.I. Popov, L. Shirmane, A. Kotlov, G.A. Bizarri, A. Burger, P. Bhattacharya, E. Tupitsyn, E. Rowe, V. Buliga, R.T. Williams,
  5. Photo-induced current transient spectroscopy and photoluminescence studies of defects in AgGa0.6In0.4Se2 , J. of Phys. D- Appl. Phys, 46, 305103 (2013)Y. Cui, P. Bhattacharya, R. Santos-Ortiz, U. Roy, A Burger.
  6. Instrument development and gamma spectroscopy with strontium iodide, IEEE Trans. Of Nuclear science, 60, 955 (2013),  N.J.Cherepy   et al.
  7. Self-assembled hierarchical nanostructures composed of novel chalcopyrite nanosheets for photovoltaic properties, J. of Nanoscience and nanotechnology, 13, 467 (2013), O. Bamiduro, et al.
  8. "Single crystal of LiInSe2 semiconductor for neutron detector," Appl. Phys. Lett., 101, 202101 (2012), E. Tupitsyn, P. Bhattacharya, E. Rowe, L. Matei, M. Groza, B. Wiggins, A. Burger, and A. Stowe,
  9. Raman spectroscopy study of BaI2: Eu and SrI2: Eu scintillator crystals, Solid. State Communication, 151, 541 (2011) , Y. Cui et al.

10. Growth improvement and characterization of AgGaxIn1-xSe2 chalcopyrite crystals using the horizontal Bridgman technique, J. Crystal growth, 314, 283 (2011), R. Santos-Ortiz et al.

 

 

Pijush Bhattacharya             
Research Associate Professor

Education
BS in Physics
MS in Physics
Ph.D. in Materials Science.
Post Doc: Physics, University of Puerto Rico

Contact Information
242 Dubois Hall
1000 17th Ave. N.
Nashville, TN 37208

615.329.8892